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IRFD120 Power Mosfet Transistor electrical ic N-Channel Power MOSFET

Categories Power Mosfet Transistor
Brand Name: Anterwell
Model Number: IRFD120
Certification: new & original
Place of Origin: original factory
MOQ: 10pcs
Price: Negotiate
Payment Terms: T/T, Western Union, Paypal
Supply Ability: 8500pcs
Delivery Time: 1 day
Packaging Details: Please contact me for details
Drain to Source Breakdown Voltage: 100 V
Drain to Gate Voltage: 100 V
Continuous Drain Current: 1.3 A
Pulsed Drain Current: 5.2 A
Maximum Power Dissipation: 1.0 W
Operating and Storage Temperature: -55 to 150 ℃
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    IRFD120 Power Mosfet Transistor electrical ic N-Channel Power MOSFET


    IRFD120

    1.3A, 100V, 0.300 Ohm, N-Channel Power MOSFET


    This advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. They can be operated directly from integrated circuits.

    Formerly developmental type TA17401.


    Features

    • 1.3A, 100V

    • rDS(ON) = 0.300Ω

    • Single Pulse Avalanche Energy Rated

    • SOA is Power Dissipation Limited

    • Nanosecond Switching Speeds

    • Linear Transfer Characteristics

    • High Input Impedance

    • Related Literature

    - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”


    Absolute Maximum Ratings TC = 25℃, Unless Otherwise Specified

    PARAMETERSYMBOLIRFD120UNITS
    Drain to Source Breakdown Voltage (Note 1)VDS100V
    Drain to Gate Voltage (RGS = 20kΩ) (Note 1)VDGR100V
    Continuous Drain CurrentID1.3A
    Pulsed Drain CurrentIDM5.2A
    Gate to Source VoltageVGS±20V
    Maximum Power DissipationPD1.0W
    Linear Derating Factor (See Figure 1)0.008W/℃
    Single Pulse Avalanche Energy Rating (Note 3)EAS36mJ
    Operating and Storage TemperatureTJ, TSTG-55 to 150

    Maximum Temperature for Soldering

    Leads at 0.063in (1.6mm) from Case for 10s

    Package Body for 10s, See Techbrief 334


    TL

    Tpkg


    300

    260


    CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

    NOTE:

    1. TJ = 25℃ to 125℃.

    3. VDD = 25V, starting TJ = 25℃, L = 32mH, RG = 25Ω, peak IAS = 1.3A.



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