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IPS65R1K4C6AKMA1 Field Effect Transistor Transistors FETs MOSFETs Single

Categories Field Effect Transistor
Part Number: IPS65R1K4C6AKMA1
Manufacturer: Infineon Technologies
Description: MOSFET N-CH 650V 3.2A TO-251
Category: Transistors - FETs, MOSFETs - Single
Family: Transistors - FETs, MOSFETs - Single
Series: CoolMOS™
Place of Origin: Original
MOQ: Negotiable
Price: Negotiable
Delivery Time: Negotiable
Payment Terms: T/T, L/C, D/A, D/P, T/T, Western Union, MoneyGram
Supply Ability: 100000
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IPS65R1K4C6AKMA1 Field Effect Transistor Transistors FETs MOSFETs Single

IPS65R1K4C6AKMA1 Specifications

Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25°C3.2A (Tc)
Drive Voltage (Max Rds On,Min Rds On)10V
Vgs(th) (Max) @ Id3.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs10.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds225pF @ 100V
Vgs (Max)±20V
FET Feature-
Power Dissipation (Max)28W (Tc)
Rds On (Max) @ Id, Vgs1.4 Ohm @ 1A, 10V
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO251-3
Package / CaseTO-251-3 Stub Leads, IPak
ShipmentUPS/EMS/DHL/FedEx Express.
CondtionNew original factory.

IPS65R1K4C6AKMA1 Packaging

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