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flotation cell design

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Best High Density Cell Design JSCJ CJAB35N03S Plastic Encapsulated Mosfet with Excellent Heat Dissipation wholesale
High Density Cell Design JSCJ CJAB35N03S Plastic Encapsulated Mosfet with Excellent Heat Dissipation
Model Number: CJAB35N03S Drain to Source Voltage: 30V
Current - Continuous Drain(Id): 35A RDS(on): 10mΩ@4.5V,10A
Operating Temperature -: - Gate Threshold Voltage (Vgs(th)): 2.5V@250uA
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
Best Power MOSFET BL BLM07N06 D with high density cell design offering low RDS ON and high ESD protection wholesale
Power MOSFET BL BLM07N06 D with high density cell design offering low RDS ON and high ESD protection
Model Number: BLM07N06-D Drain to Source Voltage: 60V
Current - Continuous Drain(Id): 95A Operating Temperature -: -55℃~+175℃
RDS(on): 7mΩ@10V Gate Threshold Voltage (Vgs(th)): 4V@250uA
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
Best Surface Mount N Channel MOSFET BORN AO3416 with Ultra Low On Resistance and High Density Cell Design wholesale
Surface Mount N Channel MOSFET BORN AO3416 with Ultra Low On Resistance and High Density Cell Design
Model Number: AO3416 Configuration: -
Drain to Source Voltage: 20V Current - Continuous Drain(Id): 6.5A
Operating Temperature -: -25℃~+150℃ RDS(on): 22mΩ@4.5V,6.5A
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
Best CET Chino Excel Tech CEA3252 N Channel Enhancement Mode Transistor Featuring High Density Cell Design wholesale
CET Chino Excel Tech CEA3252 N Channel Enhancement Mode Transistor Featuring High Density Cell Design
Model Number: CEA3252 Drain to Source Voltage: 30V
Current - Continuous Drain(Id): 5A Operating Temperature -: -
RDS(on): 45mΩ@4.5V,4A Gate Threshold Voltage (Vgs(th)): 3V@250uA
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
Best Voltage Controlled N Channel MOSFET CBI 2N7002KT High Density Cell Design for Small Signal Switching wholesale
Voltage Controlled N Channel MOSFET CBI 2N7002KT High Density Cell Design for Small Signal Switching
Model Number: 2N7002KT Drain to Source Voltage: 60V
Current - Continuous Drain(Id): 340mA Operating Temperature -: -55℃~+150℃
RDS(on): 5.3Ω@4.5V Gate Threshold Voltage (Vgs(th)): 2.5V@1mA
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
Best High density cell design ChipNobo AO3404A MOSFET with low RDSon and maximum DC current capability wholesale
High density cell design ChipNobo AO3404A MOSFET with low RDSon and maximum DC current capability
Model Number: AO3404A Drain to Source Voltage: 30V
Current - Continuous Drain(Id): 5.8A RDS(on): 42mΩ@4.5V
Gate Threshold Voltage (Vgs(th)): 3V@250uA Type: N-Channel
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
Best High Density Cell Design ElecSuper AON7400A ES N Channel MOSFET for Charging and Conversion Circuits wholesale
High Density Cell Design ElecSuper AON7400A ES N Channel MOSFET for Charging and Conversion Circuits
Model Number: AON7400A(ES) Drain to Source Voltage: 30V
Current - Continuous Drain(Id): 40A RDS(on): 12mΩ@10V
Gate Threshold Voltage (Vgs(th)): 1.8V@250uA Type: N-Channel
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
Best High Density Cell Design P Channel MOSFET ElecSuper SI2307A ES with Low Gate Charge and Rugged Build wholesale
High Density Cell Design P Channel MOSFET ElecSuper SI2307A ES with Low Gate Charge and Rugged Build
Model Number: SI2307A-ES Drain to Source Voltage: 30V
Current - Continuous Drain(Id): 4.2A Operating Temperature -: -55℃~+150℃
RDS(on): 42mΩ@10V;49mΩ@4.5V Gate Threshold Voltage (Vgs(th)): 800mV@250uA
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
Best High density cell design MOSFET ElecSuper ES3134KQ suitable for DC DC conversion and power switching wholesale
High density cell design MOSFET ElecSuper ES3134KQ suitable for DC DC conversion and power switching
Model Number: ES3134KQ Drain to Source Voltage: 20V
Current - Continuous Drain(Id): 880mA Operating Temperature -: -55℃~+150℃
RDS(on): 220mΩ@4.5V Gate Threshold Voltage (Vgs(th)): 750mV@250uA
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
Best Power Management MOSFET ElecSuper RK7002BMT116-ES with High Density Cell Design and Avalanche Rating wholesale
Power Management MOSFET ElecSuper RK7002BMT116-ES with High Density Cell Design and Avalanche Rating
Model Number: RK7002BMT116-ES Drain to Source Voltage: 60V
Current - Continuous Drain(Id): 300mA Operating Temperature -: -55℃~+150℃
RDS(on): 1.85Ω@10V;2.05Ω@4.5V Gate Threshold Voltage (Vgs(th)): 1.6V@250uA
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
Best Power Switching MOSFET ElecSuper AO4406AL N Channel with Low Gate Leakage and High Density Cell Design wholesale
Power Switching MOSFET ElecSuper AO4406AL N Channel with Low Gate Leakage and High Density Cell Design
Model Number: AO4406AL Drain to Source Voltage: 30V
Current - Continuous Drain(Id): 20A Operating Temperature -: -55℃~+150℃
RDS(on): 10mΩ@10V;17mΩ@4.5V Gate Threshold Voltage (Vgs(th)): 1.6V@250uA
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
Best N Channel MOSFET ElecSuper SI2324A TP Offering Low RDS ON and High Density Cell Design for Switching wholesale
N Channel MOSFET ElecSuper SI2324A TP Offering Low RDS ON and High Density Cell Design for Switching
Model Number: SI2324A-TP Drain to Source Voltage: 100V
Current - Continuous Drain(Id): 2.6A Operating Temperature -: -55℃~+150℃
RDS(on): 90mΩ@10V;120mΩ@4.5V Gate Threshold Voltage (Vgs(th)): 1.65V@250uA
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
Best SOP 8 Packaged P Channel Power MOSFET GL GL14P04-8 with High Density Cell Design and RoHS Compliance wholesale
SOP 8 Packaged P Channel Power MOSFET GL GL14P04-8 with High Density Cell Design and RoHS Compliance
Model Number: GL14P04-8 Drain to Source Voltage: 40V
Current - Continuous Drain(Id): 14A RDS(on): 11mΩ@10V
Operating Temperature -: -55℃~+150℃ Gate Threshold Voltage (Vgs(th)): 3V@250uA
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
Best Load Switching N Channel MOSFET FUXINSEMI FS2312 with High Density Cell Design and Low On Resistance wholesale
Load Switching N Channel MOSFET FUXINSEMI FS2312 with High Density Cell Design and Low On Resistance
Model Number: FS2312 Drain to Source Voltage: 20V
Current - Continuous Drain(Id): 6.8A RDS(on): 18mΩ@4.5V;22mΩ@2.5V;39mΩ@1.8V
Gate Threshold Voltage (Vgs(th)): 1V Reverse Transfer Capacitance (Crss@Vds): 75pF@10V
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
Best Plastic Encapsulated Mosfet Goodwork BSS123 With High Density Cell Design For Switching Applications wholesale
Plastic Encapsulated Mosfet Goodwork BSS123 With High Density Cell Design For Switching Applications
Model Number: BSS123 Configuration: -
Drain to Source Voltage: 100V Current - Continuous Drain(Id): 170mA
Operating Temperature -: - RDS(on): 6Ω@10V
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
Best High density cell design transistor SI2302 with low RDS ON and high saturation current capability wholesale
High density cell design transistor SI2302 with low RDS ON and high saturation current capability
Model Number: SI2302 Drain to Source Voltage: 20V
Current - Continuous Drain(Id): 4.3A RDS(on): 50mΩ@2.5V
Operating Temperature -: -55℃~+150℃ Gate Threshold Voltage (Vgs(th)): 1.1V@250uA
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
Best switching MOSFET GOODWORK RK7002BM-GK plastic encapsulated device with high density cell design and performance wholesale
switching MOSFET GOODWORK RK7002BM-GK plastic encapsulated device with high density cell design and performance
Model Number: RK7002BM-GK Configuration: -
Drain to Source Voltage: 60V Current - Continuous Drain(Id): 340mA
Operating Temperature -: -55℃~+150℃ RDS(on): 1.7Ω@10V
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
Best Voltage Controlled N Channel Transistor GOODWORK BSS139 with High Density Cell Design and Ruggedness wholesale
Voltage Controlled N Channel Transistor GOODWORK BSS139 with High Density Cell Design and Ruggedness
Model Number: BSS139 Drain to Source Voltage: 50V
Current - Continuous Drain(Id): 220mA Operating Temperature -: -55℃~+150℃
RDS(on): 1.7Ω@10V,220mA Gate Threshold Voltage (Vgs(th)): 1.5V@1mA
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
Best N channel Power MOSFET Guangdong Hottech HKTD5N20 with High Density Cell Design and 0.6 Ohm Maximum RDS wholesale
N channel Power MOSFET Guangdong Hottech HKTD5N20 with High Density Cell Design and 0.6 Ohm Maximum RDS
Model Number: HKTD5N20 Drain to Source Voltage: 200V
Current - Continuous Drain(Id): 5A RDS(on): 600mΩ@10V,2.5A
Operating Temperature -: -55℃~+150℃ Gate Threshold Voltage (Vgs(th)): 4V
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
Best 27Ah 3.7V Battery Cell High Energy Density Fast Charge Prismatic Cell Design wholesale
27Ah 3.7V Battery Cell High Energy Density Fast Charge Prismatic Cell Design
Model Number: PL10374172-22Ah Place of Origin: China
Shenzhen First Tech Co., Ltd. [China]
Verified Supplier
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