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Multipurpose Igbt Transistor

multipurpose igbt transistor

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FGA25N120ANTD FGA25N120 Transistor 25N120 Original New IGBT Mosfet NPT and Trench 1200V 50A TO-3P China Made Bulk New In Stock

Brand Name: Original	Model Number: FGA25N120ANTD
Minimum Order Quantity: 10	Delivery Time: 1-7 days
Payment Terms: T/T, Western Union, Paypal,Alibaba trade order	Application: Amplifier
Shenzhen Quanyuantong Electronics Co., Ltd.
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insulated gate bipolar transistor HXY MOSFET AOK40B65M3 with low gate charge and high voltage rating

Model Number: AOK40B65M3	Pd - Power Dissipation: 250W
Td(off): 136ns	Td(on): 26ns
Collector-Emitter Breakdown Voltage (Vces): 650V	Input Capacitance(Cies): 1.52nF@25V
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
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power transistor HXY MOSFET IRG7PH46U-EP-HXY offering improved switching speed and thermal stability

Model Number: IRG7PH46U-EP-HXY	Pd - Power Dissipation: 441W
Td(off): 262ns	Td(on): 25ns
Collector-Emitter Breakdown Voltage (Vces): 1.2kV	Reverse Transfer Capacitance (Cres): 93pF
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
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Durable power transistor HXY MOSFET IRGP4063DPBF-HXY for boost converters and portable power stations

Model Number: IRGP4063DPBF-HXY	Td(off): 122ns
Pd - Power Dissipation: 300W	Td(on): 24ns
Collector-Emitter Breakdown Voltage (Vces): 650V	Reverse Transfer Capacitance (Cres): 92pF
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
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switching transistor HXY MOSFET RGS00TS65EHRC11-HXY for UPS motor drives boost converter applications

Model Number: RGS00TS65EHRC11-HXY	Td(off): 122ns
Pd - Power Dissipation: 300W	Td(on): 24ns
Collector-Emitter Breakdown Voltage (Vces): 650V	Reverse Transfer Capacitance (Cres): 92pF
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
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Power transistor HXY MOSFET RGWS80TS65GC13-HXY with excellent thermal stability and low EMI

Model Number: RGWS80TS65GC13-HXY	Pd - Power Dissipation: 250W
Td(off): 136ns	Td(on): 26ns
Collector-Emitter Breakdown Voltage (Vces): 650V	Input Capacitance(Cies): 1.52nF@25V
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
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switching transistor HXY MOSFET NGTB40N120IHRWG-HXY with RoHS compliance and green halogen free packaging

Model Number: NGTB40N120IHRWG-HXY	Pd - Power Dissipation: 441W
Td(off): 262ns	Td(on): 25ns
Collector-Emitter Breakdown Voltage (Vces): 1.2kV	Reverse Transfer Capacitance (Cres): 93pF
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
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insulated gate bipolar transistor HXY MOSFET AOK60B65H2AL with advanced trench and field stop technology

Model Number: AOK60B65H2AL	Description: TO-247 Single IGBTs RoHS
Mfr. Part #: AOK60B65H2AL	Package: TO-247
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
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insulated gate bipolar transistor HXY MOSFET SPT40N120F1AT8TL HXY designed for UPS and inverter

Model Number: SPT40N120F1AT8TL-HXY	Td(off): 195ns
Pd - Power Dissipation: 417W	Td(on): 48ns
Collector-Emitter Breakdown Voltage (Vces): 1.2kV	Reverse Transfer Capacitance (Cres): 35pF
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
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Power transistor HXY MOSFET IGW50N60TP designed for UPS EV charger and solar string inverter systems

Model Number: IGW50N60TP-HXY	Pd - Power Dissipation: 250W
Td(off): 110ns	Td(on): 17ns
Collector-Emitter Breakdown Voltage (Vces): 650V	Input Capacitance(Cies): 1.916nF@25V
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
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Insulated Gate Bipolar Transistor HXY MOSFET IXYH40N120C3-HXY with Low Saturation Voltage and EMI

Model Number: IXYH40N120C3-HXY	Td(off): 195ns
Pd - Power Dissipation: 417W	Td(on): 48ns
Collector-Emitter Breakdown Voltage (Vces): 1.2kV	Reverse Transfer Capacitance (Cres): 35pF
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
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insulated gate bipolar transistor HXY MOSFET AOK40B65HQ2 with low EMI and high temperature tolerance

Model Number: AOK40B65HQ2	Pd - Power Dissipation: 250W
Td(off): 136ns	Td(on): 26ns
Collector-Emitter Breakdown Voltage (Vces): 650V	Reverse Transfer Capacitance (Cres): 11pF
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
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1200V 75A Insulated Gate Bipolar Transistor HXY MOSFET APT75GP120B2G-HXY for High Power Applications

Model Number: APT75GP120B2G-HXY	Td(off): 185ns
Pd - Power Dissipation: 930W	Td(on): 46ns
Collector-Emitter Breakdown Voltage (Vces): 1.2kV	Reverse Transfer Capacitance (Cres): 61pF
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
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1200V 50A power transistor HXY MOSFET IXYR50N120C3D1-HXY designed for UPS EV charger and solar inverter

Model Number: IXYR50N120C3D1-HXY	Td(off): 216ns
Pd - Power Dissipation: 600W	Td(on): 55ns
Collector-Emitter Breakdown Voltage (Vces): 1.2kV	Reverse Transfer Capacitance (Cres): 42pF
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
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insulated gate bipolar transistor HXY MOSFET IXYH55N120C4-HXY with trench and field stop technology

Model Number: IXYH55N120C4-HXY	Pd - Power Dissipation: 652W
Td(off): 280ns	Td(on): 39ns
Collector-Emitter Breakdown Voltage (Vces): 1.2kV	Reverse Transfer Capacitance (Cres): 179pF
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
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Insulated Gate Bipolar Transistor HXY MOSFET IXXX160N65B4-HXY 650V 160A TO247P Package RoHS Compliant Device

Model Number: IXXX160N65B4-HXY	Td(off): 379ns
Pd - Power Dissipation: 1kW	Td(on): 94ns
Collector-Emitter Breakdown Voltage (Vces): 650V	Reverse Transfer Capacitance (Cres): 70pF
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
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insulated gate bipolar transistor HXY MOSFET IXGH40N120B2D1-HXY for solar inverters and energy storage systems

Model Number: IXGH40N120B2D1-HXY	Td(off): 195ns
Pd - Power Dissipation: 417W	Td(on): 48ns
Collector-Emitter Breakdown Voltage (Vces): 1.2kV	Reverse Transfer Capacitance (Cres): 35pF
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
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switching transistor HXY MOSFET IXXH60N65B4-HXY designed for high pulsed collector current applications

Model Number: IXXH60N65B4-HXY	Pd - Power Dissipation: 250W
Td(off): 124ns	Td(on): 24ns
Collector-Emitter Breakdown Voltage (Vces): 650V	Reverse Transfer Capacitance (Cres): 93pF
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
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650V 50A Power Transistor HXY MOSFET IGW50N65F5-HXY with Low Saturation Voltage and Low Gate Charge

Model Number: IGW50N65F5-HXY	Pd - Power Dissipation: 250W
Td(off): 110ns	Td(on): 17ns
Collector-Emitter Breakdown Voltage (Vces): 650V	Reverse Transfer Capacitance (Cres): 13pF
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
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Insulated Gate Bipolar Transistor HXY MOSFET IRG7PH46UD-EP-HXY with 1200V Voltage and 40A Current

Model Number: IRG7PH46UD-EP-HXY	Pd - Power Dissipation: 441W
Td(off): 262ns	Td(on): 25ns
Collector-Emitter Breakdown Voltage (Vces): 1.2kV	Reverse Transfer Capacitance (Cres): 93pF
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
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